By A. R. Alvarez (auth.), A. R. Alvarez (eds.)
The subject of bipolar suitable CMOS (BiCMOS) is an interesting one and of ever-growing useful value. The "technology pendulum" has swung from the 2 extremes of preeminence of bipolar within the Nineteen Fifties and 60s to the obvious unending horizons for VLSI NMOS know-how in the course of the Seventies and 80s. but beginning within the Eighties severallimits have been clouding the horizon for natural NMOS know-how. CMOS reemerged as a· conceivable excessive density, excessive functionality know-how. equally by means of the mid Nineteen Eighties scaled bipolar units had not just validated new excessive pace documents, yet early types of combined bipolar/CMOS know-how have been being produced. accordingly the paradigm of both excessive density . Q[ excessive velocity was once metamorphasizing into a chance for either velocity and density through a BiCMOS procedure. Now as we method the Nineteen Nineties there were a couple of functional demonstrations of BiCMOS either for reminiscence and common sense functions and that i count on the fad to expand over the following decade. This booklet makes a well timed contribution to the sphere of BiCMOS expertise and circuit improvement. The evolution is now certainly swift in order that it's tricky to make one of these ebook exhaustive of present advancements. most likely both tough is the truth that the hot know-how opens quite a number novel circuit possibilities which are as but purely formative of their improvement. Given those stumbling blocks it's a herculean activity to attempt to collect a booklet on BiCMOS.
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Additional info for BiCMOS Technology and Applications
This effect is discussed in more detail in chapter 4. 2 Bipolar Devices As with the MOS transistor, the bipolar transistor can be divided into intrinsic and extrinsic regions. The intrinsic device accounts for the profile design associated with the emitter and the underlying base and collector regions. Extrinsic device concems include parasitic resistances in series with the base and collector, and capacitances associated with the base-collector and the collector-substrate junctions. Base Design Issues.
Still, as the capability of new cell generators improve, CAD will become less of an issue. 7 Summary BiCMOS technology significantly enhances speed performance while incurring a negligible power or area penalty. Thus BiCMOS can provide applications with CMOS power and densities at speeds which were previously the exclusive domain of bipolar. This has been demonstrated in applications ranging from static RAMs to gate arrays to microprocessors. Thus the concept of a "system on a chip" becomes a reality with BiCMOS.
At high currents, minority carrier storage associated with high level injection prevaiis. Curve is composite of effects. 36 BiCMOS Technology and Appllcations Re 2500 , . 16. BiCMOS gate delay versus load capacitance for various values of Re. Solid curves: analytical; solid dots: simulation; error bars: experimental. 24]. © 1988 IEEE. U1l2, a collector doping of lE16 cm-3 is typical. For high performance bipolar transistors, a heavily-doped buried layer is used undemeath the epitaxial layer. This is necessary to minimize the collector resistance, which has a dominant effect on the propagation delay of a BiCMOS gate under heavy capacitive loading (fig.