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Unfortunately, a memory satisfying all requirements has yet to be developed. Memory devices have consequently been advanced by pursuing just one of these virtues, and appear in many different forms. SRAM dominates high speed on-chip caches for advanced logic and DRAM occupies applications for high-density and high-speed computation; but DRAM’s data is volatile, and Flash memory is widely used for high density and non-volatile data storage. Therefore, if a single memory transistor can process different memory functions, a paradigm shift from ‘scaling’ to ‘multifunction’ can continue the evolution of silicon technology.

Besides, β2 may be chosen to be larger for a very low distortion transconductor. It means that the tradeoff between linearity and bandwidth of transconductor is controlled by β2. Therefore, β2 should be selected to compromise these two characteristics for a given application. VDS1 is calculated by follows. Assuming M3 is in saturation region in Fig. 3. 30 Advances in Solid State Circuits Technologies IC = 1 β 3 (VGS 3 − VT 3 )2 2 => VGS 3 = VC − VDS 1 = 2 IC β3 + VT 3 ⎛ 2 IC ⎞ => VDS 1 = VC − ⎜ + VT 3 ⎟ ⎜ β3 ⎟ ⎝ ⎠ (10) ⎡ ⎛ 2 IC ⎞⎤ + VT 3 ⎟⎥ .

8V or below. The main reason is that auxiliary amplifier under the low supply voltage can’t provide enough gain to keep the constant drain-source voltage. Therefore, we propose a triode transconductor which uses new structure to replace the auxiliary amplifier. Fig. 7 shows the proposed triode transconductor structure. MOS M5, M7, M9 and M11 are made up a two-stage amplifier to replace the auxiliary amplifier. The two-stage amplifier is implemented using M9 with the active loads M11 formed the first stage and M5 with the active load M7 formed the second stage.

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